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Sensor Chip Series

Detector Chip Series

TO Product Series

Silicon Photonic Integration Series

P/N:GTPD20GA1_750

InGaAs 4x25G PIN PD Array(pitch=750um) (?20μm)
Product Features:
The active diameter is 20μm, featuring high reponsivity, low dark current, GSG structure, coplanar electrodes and pitch size is 750um.
Applications:
It can be used in 5G Wireless, 100G CWDM4 and 100G LR4.
P/N:GTPD50V4

InGaAs 10G PIN PD (?50μm)
Product Features:
The active diameter is 50μm, featuring high reponsivity, low dark current, GS structure and coplanar electrodes.
Applications:
It can be used in 10G data transmission and wireless communication.
P/N:GTANPD60V1

2.5G Analog PIN PD (?60 μm)
Product Features:
The active diameter is 60μm, featuring high reponsivity, low dark current, low second and third order intermodulation distortion and gold-coated ground surface at the bottom side of chip.
Applications:
It can be used in CATV analog optical receiver and analog video.
P/N:GTANPD80V2

2.5G Analog PIN PD (?80 μm)
Product Features:
The active diameter is 80μm, featuring high reponsivity, low dark current, low second and third order intermodulation distortion and gold-coated ground surface at the bottom side of chip.
Applications:
It can be used in CATV analog optical receiver and analog video.
P/N:GTPD80V2

2.5G PIN PD (?80 μm)
Product Features:
The active diameter is 80μm, featuring high reponsivity, low dark current and gold-coated ground surface at the bottom side of chip.
Applications:
It can be used in low-speed optical modules and FTTR.
P/N: GTPD32AV1_250_1x4

850nm/910nm InGaAs PD Array (100Gbps PAM4)
Product Features:
The active diameter is 32μm, featuring high reponsivity(850nm/910nm/1310nm), low dark current, GSG structure, coplanar electrodes and pitch size is 250um.
Applications:
It can be used in 400G SR4 and 800G SR4.
P/N:GTEMPD230V1

InGaAs Edge-Coupled PD Chip
Product Features:
The side detection window 180×60μm, P/N bond pad on top, high Responsivity, low dark current.
Applications:
It can be used in Side coupling, laser power monitoring and optical power meter.
P/N:GTFLMPD100V1

InGaAs 100 μm Flip MPD
Product Features:
The active diameter is 100μm, featuring high reponsivity, low dark current and bottom-illuminated structure.
Applications:
It can be used in back facet laser power monitoring, optical power meter, etc.

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